Monday, February 24, 2014

GaN Semiconductor Devices (Power Semiconductors, Opto Semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends And Forecast, 2013 - 2019

GaN Semiconductor Devices (Power Semiconductors, Opto Semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends And Forecast, 2013 - 2019

Gallium Nitride (GaN) is a hard material that contains various chemical properties due to which it finds its suitability for manufacturing of semiconductor devices. Currently GaN semiconductor device market is facing a stiff competition from SiC semiconductor devices. Popularity of GaN semiconductor devices is expected to increase with the growing application areas of GaN semiconductor devices. Emergence of new technologies and rising application areas are the major drivers of this market. Electric and hybrid electric vehicles pose a huge opportunity area for GaN semiconductor. However, costlier industrial process is the major hindrance for this market.

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The objective of this report is to find, analyze, and provide growth forecasts for GaN semiconductor devices for various applications such as computer, ICT (Information and Communication Technology), automotive, military, aerospace, defense, consumer electronics and medical among others. This research report provides thorough analysis of the global GaN semiconductor device market based on its product types, applications, and geographies for the period from 2013 to 2019. It provides complete outlook of major drivers, restraints, and opportunities responsible for the popularity and growth of GaN semiconductor devices.

In addition, the report covers company profiles of key players in the market, their recent developments and business strategies. Some of the major players profiled in the report are Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF Micro Devices Inc. (U.S.) among others.

Moreover, the report helps in better understanding of the market with the help of various highlights on the competitive situation across different levels of the value chain and Porter’s five forces analysis. In all, the report provides a detailed analysis of the global GaN semiconductor devices market along with the forecast in terms of revenue (USD million) for all the segments from 2013 to 2019.

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The global GaN semiconductor devices market is segmented as follows:

GaN Semiconductor Device Market, by product type

Power semiconductors
Schottky Diode
Metal Oxide Semiconductor Field Effect Transistor (MOSFETs)
High Electron Mobility Transistors (HEMTs)
Others (Rectifiers, other advanced transistor types)
Opto semiconductors
Light Emitting Diodes
Laser Diodes

GaN Semiconductor Device Market, by application

Computer Sector
ICT Sector
Automotive Sector
Military, Aerospace and Defense
Consumer Electronics
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Table of content

Chapter 1 Preface
1.1 Report description and scope
1.2 Research methodology
1.2.1 Key data points from secondary sources
1.2.2 Key data points from primary sources
1.2.3 Models

Chapter 2 Executive Summary
2.1 Snapshot for Gallium Nitride (GaN) semiconductor devices market

CHAPTER 3 Gallium Nitride (GaN) Semiconductor Devices Market Analysis
3.1 Market definition
3.2 Market trends and future outlook, 2013 – 2019
3.3 Market dynamics
3.3.1 Drivers Growing application areas for Gallium Nitride power semiconductors Demand for high performance device from defense services
3.3.2 Restraints

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